Thanks for the article. I'm curious if ion implantation is relevant in compound semiconductors like GaN for power devices? If not, could that be a potential high risk if GaN becomes mainstream?
Hi there, sorry for the late answer, Omaha kept me busy.
Axcelis states "The Purion Power Series™ family is uniquely suited to excel at power device applications due to its innovative platform that offers the flexibility to handle multiple wafer sizes (150mm, 200mm and 300mm), various substrate types (SiC, Si IGBT, GaN, and GaAs wafers) at various implant temperatures (cold, room temperature, warm and hot)".
On the other hand I've read that GaN will still take a while before becoming economically usable. So we need to wait and see how the market develops.
Thanks for the article. I'm curious if ion implantation is relevant in compound semiconductors like GaN for power devices? If not, could that be a potential high risk if GaN becomes mainstream?
https://www.powerelectronicsnews.com/ion-implantation-in-gan-power-devices/
Hi there, sorry for the late answer, Omaha kept me busy.
Axcelis states "The Purion Power Series™ family is uniquely suited to excel at power device applications due to its innovative platform that offers the flexibility to handle multiple wafer sizes (150mm, 200mm and 300mm), various substrate types (SiC, Si IGBT, GaN, and GaAs wafers) at various implant temperatures (cold, room temperature, warm and hot)".
On the other hand I've read that GaN will still take a while before becoming economically usable. So we need to wait and see how the market develops.